|
Cells
| Size |
125 +
1 mm pseudo square
150 + 1 mm corner to corner
|
101
+ 1 mm round
|
Base
Material
|
Single
crystalline CZ silicon wafer (P-type boron doped) |
Single
crystalline CZ silicon wafer (P-type boron doped) |
| Junction |
Phosphorous
diffused (N on P) |
Phosphorous
diffused (N on P) |
| Metallisation
: Front |
Screen
Printed Silver |
Screen
Printed Silver |
| Metallisation
: Back |
Screen
Printed Ag-Al / Al |
Screen
Printed Ag- Al / Al |
| Thickness |
325 +
25 microns |
325 +
25 microns |
| Shape |
Pseudo
square |
Circular
with reference flat |
Electrical
Characteristics
| Open
Circuit Voltage Voc |
590 mV
|
590
mV |
| Short
Circuit Current |
4.6
A |
2.3
A |
| Test
Voltage Vop |
470
mV |
470
mV |
| Current
at test voltage Iop |
4.0-4.4
A |
1.9
- 2.2 A |
| Fill
factor |
0.7
(min.) |
0.7
(min.) |
| Power
Output at 470 mV |
1.9
- 2.1 W |
0.9
- 1.1 W |
| Average
Efficiency |
12.5
- 13.5% |
12.5
- 13.5 % |
|
