|
Wafers
Technical specification
Material
|
Parameter
|
Units
|
Value
|
| Crystal
Growing Procedure |
.
|
CZ |
| Conductivity
Type |
.
|
P |
| Dopant
|
.
|
Boron
|
| Orientation
|
<
> |
1 0
0 ± 3O |
| Dislocation
Density |
cm-2
|
<
2 000 |
| Resistivity
|
Ohm.cm
|
0.5
- 3.0 |
| Oxygen
Content |
at.cm-3
|
<
10 x 1017 |
| Carbon
Content |
at.cm-3
|
<
5 x 1016 |
| Lifetime
|
µsec
|
>
10 |
Wafer
|
Parameter
|
Units
|
Value
|
| Wafer
Size |
mm |
100
± 0.5 |
| Thickness
|
µm |
350
|
| Total
Thickness Variation |
µm |
<
30 |
| Taper
|
µm |
<
30 |
| Saw
Damage Depth |
µm |
<
20 |
| Surface
Finished |
as
cut- wire saw |
|
Parameter
|
Units
|
Value
|
| Wafer
Size |
mm |
125
± 0.5 |
| Thickness
|
µm |
350
|
| Total
Thickness Variation |
µm |
<
30 |
| Taper
|
µm |
<
30 |
| Saw
Damage Depth |
µm |
<
20 |
| Surface
Finished |
as
cut - wire saw |
|
Parameter
|
Units
|
Value
|
| Wafer
Size |
mm |
102.5
x 102.5 ± 0.5 |
| Thickness
|
µm |
350
|
| Total
Thickness Variation |
µm |
<
30 |
| Taper
|
µm |
<
30 |
| Saw
Damage Depth |
µm |
<
20 |
| Surface
Finished |
as
cut - wire saw |
|
Parameter
|
Units
|
Value
|
| Wafer
Size |
mm |
125
x 125 ± 0.5 |
| Thickness
|
µm |
350
|
| Total
Thickness Variation |
µm |
30 |
| Taper
|
µm |
<30
|
| Saw
Damage Depth |
µm |
<20
|
| Surface
Finished |
as
cut - wire saw |
|
